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| www..com Advanced Technical Information VUB 116 / 145 Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 10+11 12 13 19+20 VRRM = 1600 V IdAVM = 116/145 A VRRM V 1600 1600 Type 1 6+7 4+5 2+3 VUB 116-16 NO1 VUB 145-16 NO1 8+9 18 17 21+22 Symbol VRRM IdAVM IFSM I2t Ptot VCES VGE IGBT Conditions Maximum Ratings VUB 116 VUB 145 Features V A A A A A W V V A A A W V A A A A W C C C V~ V~ Nm lb.in. mm mm m/s2 g Dimensions in mm (1 mm = 0.0394") * Soldering connections for PCB mounting * Convenient package outline * Thermistor Applications * Drive Inverters with brake system Advantages * 2 functions in one package * Easy to mount with two screws * Suitable for wave soldering * High temperature and power cycling capability 1600 Rectifier Diodes 1600 TC = 100C, sinusoidal 120 TVJ = 45C, t = 10 ms, VR = 0 V TVJ = 150C, t = 10 ms, VR = 0 V TVJ = 45C, t = 10 ms, VR = 0 V TVJ = 150C, t = 10 ms, VR = 0 V TC = 25C per diode TVJ = 25C to 150C Continuous TC = 25C, DC TC = 80C, DC tp = Pulse width limited by TVJM TC = 25C 116 650 570 2110 1620 190 1200 20 95 67 100 380 1200 27 38 tbd 200 130 -40...+150 150 -40...+125 145 900 780 4050 3040 250 1200 20 141 100 150 570 IC25 IC80 ICM Ptot VRRM IFAV IFRMS IFRM IFSM Ptot TVJ TVJM Tstg VISOL Md dS dA a Weight Fast Recovery Diode TC = 80C, rectangular d = 0.5 TC = 80C, rectangular d = 0.5 TC = 80C, tP = 10 s, f = 5 kHz TVJ = 45C, t = 10 ms TC = 25C Module 50/60 Hz, t = 1 min IISOL 1 mA, t = 1 s Mounting torque Creep distance on surface Strike distance in air Maximum allowable acceleration typ. 2500 3000 2.25...2.75 20...25 12.7 9.6 50 180 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved 1-2 240 Data according to IEC 60747 www..com Advanced Technical Information VUB 116 / 145 Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 0.1 2 VUB 116 VUB 145 VUB 116 VUB 145 VUB 116 VUB 145 VUB 116 VUB 145 VUB 116 VUB 145 1.43 1.68 0.85 0.85 7.1 5.9 mA mA V V V V m m IR VF VT0 rT RthJC RthCH VBR(CES) VGE(th) ICES VCEsat tSC (SCSOA) RBSOA IGBT Rectifier Rectifier Diodes Diodes VR = VRRM, TVJ = 25C VR = VRRM, TVJ = 150C IF = 80 A, TVJ = 25C IF = 150 A, TVJ = 25C for power-loss calculations only TVJ = 150C per diode 0.65 K/W 0.5 K/W 0.1 K/W 0.1 K/W 1200 4.5 4.5 6.45 6.45 0.1 0.5 V V V mA mA V V s VGS = 0 V, IC = 0.1 mA IC = 8 mA IC = 3 mA TVJ = 25C, VCE = 1200 V TVJ = 125C, VCE = 0,8 * VCES VGE = 15 V, IC = 100 A VGE = 15 V, IC = 150 A VUB 116 VUB 145 VUB 116 VUB 145 3.5 3.7 10 VGE = 15 V, VCE = 720 V, TVJ = 125C, VGE = 15 V, VCE = 1200 V, TVJ = 125C, clamped inductive load, L = 100 H RG = 22 VUB 116 RG = 15 VUB 145 VCE = 25 V, f = 1 MHz, VGE = 0 V VUB 116 VUB 145 VCE = 720 V, IC = 50/75 A VGE = 15 V, RG = 32/15 Inductive load; L = 100 H TVJ = 125C 3.8 5.7 150 680 6 9 5 7.5 100 150 A A nF nF ns ns mJ mJ mJ mJ Cies td(on) td(off) Eon Eoff RthJC RthJH IR VF VT0 rT IRM trr RthJC RthCH R25 B25/50 NTC Fast Recovery Diode VUB 116 VUB 145 VUB 116 VUB 145 VUB 116 VUB 145 VUB 116 VUB 145 0.33 K/W 0.22 K/W 0.66 K/W 0.44 K/W 0.25 1 2.76 1.3 16 5.5 40 11 mA mA V V m A ns 0.9 K/W 0.1 K/W 240 VR = VRRM, TVJ = 25C VR = 1200 V, TVJ = 125C IF = 30 A, TVJ = 25C For power-loss calculations only TVJ = 150C IF = 50 A, -diF/dt = 100 A/s, VR = 100 V IF = 1 A, -diF/dt = 200 A/s, VR = 30 V 4.75 5.0 5.25 3375 k K (c) 2002 IXYS All rights reserved 2-2 |
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